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This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.IRF 520 MOSFET
NPR 100.00 -
Features:
- Mini DC to DC 12V-24V to 5V 3A
- Output 1.8V, 2.5V, 3.3V, 5V, 9V, 12V
Stepdown Power Supply Module (Buck Converter)
NPR 250.00 -
- This is a module used for ease of use compared to the bulky traditional serial (DB9) port.
- 100% Brand new and high quality
- Adopt imported controller RS232 TTL, which can stabilize the flash with high speed
- 500mA self-recovery fuse for protection
Two data transmission indicator can monitor data transfer status in real time
Reserve 3.3V and 5V pin interface for easy operation
The entire board is coated by the high quality transparent heat-shrinkable sleeve, making the PCB in insulation state from outside
The electrostatic package ensures the board will not be damaged before useUSB To RS232 TTL Auto Converter Module
NPR 480.00