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    This N-Channel enhancement mode silicon gate power field
    effect transistor is an advanced power MOSFET designed,
    tested, and guaranteed to withstand a specified level of
    energy in the breakdown avalanche mode of operation. All of
    these power MOSFETs are designed for applications such
    as switching regulators, switching convertors, motor drivers,
    relay drivers, and drivers for high power bipolar switching
    transistors requiring high speed and low gate drive power. 

    IRF 520 MOSFET

    NPR 100.00
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    Features:

    • Mini DC to DC 12V-24V to 5V 3A
    • Output 1.8V, 2.5V, 3.3V, 5V, 9V, 12V

    Stepdown Power Supply Module (Buck Converter)

    NPR 250.00
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    • This is a module used for ease of use compared to the bulky traditional serial (DB9) port.
    • 100% Brand new and high quality
    • Adopt imported controller RS232 TTL, which can stabilize the flash with high speed
    • 500mA self-recovery fuse for protection

    Two data transmission indicator can monitor data transfer status in real time
    Reserve 3.3V and 5V pin interface for easy operation
    The entire board is coated by the high quality transparent heat-shrinkable sleeve, making the PCB in insulation state from outside
    The electrostatic package ensures the board will not be damaged before use

    USB To RS232 TTL Auto Converter Module

    NPR 480.00