NPR 100.00

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. 

12 in stock

SKU: 8.4 Category: Tags: , ,

• 9.2A, 100V
• rDS(ON) = 0.270Ω

• SOA is Power Dissipation Limited

• Single Pulse Avalanche Energy Rated

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance


There are no reviews yet.

Be the first to review “IRF 520 MOSFET”

Your email address will not be published. Required fields are marked *