IRF520N MOSFET View larger

IRF520N MOSFET

8.4

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This N-Channel enhancement mode silicon gate power fieldeffect transistor is an advanced power MOSFET designed,tested,and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

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All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.

Specification:

Type of IRF520 transistor: MOSFET
Type of control channel: N-Channel
Maximum power dissipation (Pd): 70W
Maximum drain-source voltage (Uds): 100V
Maximum drain-gate voltage (Udg): 100V
Maximum gate-source voltage (Ugs): 20V
Maximum drain current (Id): 10A
Maximum junction temperature (Tj): 175°C
Rise Time of IRF520 transistor (tr): 15/75nS
Drain-source Capacitance (Cd), pf: 450pF
Maximum drain-source on-state resistance (Rds), Om: 0.270
Manufacturer of IRF520 transistor: STE
Case of IRF520 transistor: TO-220
Application of IRF520 transistor: ENHANCEMENT MODE POWER MOS

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IRF520N MOSFET

IRF520N MOSFET

This N-Channel enhancement mode silicon gate power fieldeffect transistor is an advanced power MOSFET designed,tested,and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

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